pmbt2907; PMBT2907A features high current (max. 600 ma) low voltage (max. 60 v). applications switching and linear amplification. description pnp switching transistor in a sot23 plastic package. npn complements: pmbt2222 and pmbt2222a. marking type number marking code (1) pmbt2907 * 2b PMBT2907A * 2f pinning pin description 1 base 2 emitter 3 collector fig.1 simplified outline (sot23) and symbol. handbook, halfpage 2 1 3 mam256 top view 2 3 1 limiting values in accordance with the absolute maximum rating system (iec 134). symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter -- 60 v v ceo collector-emitter voltage open base pmbt2907 -- 40 v PMBT2907A -- 60 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 600 ma i cm peak collector current -- 800 ma i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c - 250 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c product specification 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. characteristics t j =25 c unless otherwise speci?ed. symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 500 k/w symbol parameter conditions min. max. unit i cbo collector cut-off current i e = 0; v cb = - 50 v pmbt2907 -- 20 na PMBT2907A -- 10 na collector cut-off current i e = 0; v cb = - 50 v; t j = 125 c pmbt2907 -- 20 m a PMBT2907A -- 10 m a i ebo emitter cut-off current i c = 0; v eb = - 5v -- 50 na h fe dc current gain i c = - 0.1 ma; v ce = - 10 v pmbt2907 35 - PMBT2907A 75 - dc current gain i c = - 1 ma; v ce = - 10 v pmbt2907 50 - PMBT2907A 100 - dc current gain i c = - 10 ma; v ce = - 10 v pmbt2907 75 - PMBT2907A 100 - dc current gain i c = - 150 ma; v ce = - 10 v 100 300 dc current gain i c = - 500 ma; v ce = - 10 v pmbt2907 30 - PMBT2907A 50 - v cesat collector-emitter saturation voltage i c = - 150 ma; i b = - 15 ma -- 400 mv i c = - 500 ma; i b = - 50 ma -- 1.6 v v besat base-emitter saturation voltage i c = - 150 ma; i b = - 15 ma -- 1.3 v i c = - 500 ma; i b = - 50 ma -- 2.6 v c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz - 8pf c e emitter capacitance i c =i c = 0; v eb = - 2 v; f = 1 mhz - 30 pf f t transition frequency i c = - 50 ma; v ce = - 20 v; f = 100 mhz 200 - mhz pmbt2907; PMBT2907A product specification 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
switching times (between 10% and 90% levels); (see fig.2) t on turn-on time i con = - 150 ma; i bon = - 15 ma; i boff =15ma - 40 ns t d delay time - 12 ns t r rise time - 30 ns t off turn-off time - 365 ns t s storage time - 300 ns t f fall time - 65 ns symbol parameter conditions min. max. unit v i = - 9.5 v; t = 500 m s; t p =10 m s; t r =t f 3 ns. r1 = 68 w ; r2 = 325 w ; r b = 325 w ; r c = 160 w . v bb = 3.5 v; v cc = - 29.5 v. oscilloscope: input impedance z i =50 w . fig.2 test circuit for switching times. h andbook, full pagewidth r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc pmbt2907; PMBT2907A product specification 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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